The Institute of Technical Physics (ITP) is dedicated to fostering competitiveness and modernity while providing an appealing environment for employees and students engaged in technical physics and technologies. Within the institute, several departments operate, each focusing on specific aspects of the discipline:
A primary area of focus at the ITP revolves around laser processing applied to semiconductors, metals, superconducting materials, nano-electronics, and optoelectronics. The institute is particularly interested in investigating the interaction between powerful laser radiation and semiconductors, such as CdTe, CdZnTe, Si, Ge, SiGe, GeSn, GaAs, TiO2, ZnO, InGaN, SnS, and SiC.
Recently, the ITP has been extensively researching ways to enhance the quality and phase transitions in semiconductors such as TiO2, CdS, InGaN, ZnO, and CdZnTe. Additionally, they have made remarkable strides in overcoming the equilibrium solubility of Sn atoms in Ge.
A key strength of the institute lies in its wide-ranging experience collaborating with research institutes abroad, including those in Germany, the UK, Switzerland, Japan, Taiwan, Spain, Lithuania, Ukraine, and Estonia. Furthermore, the ITP actively participates in cooperative international projects like FP7, H2020 exemplified by their contributions to CERN-coordinated ARIES and IFAST projects.
Another topic of the ITP is energy harvesting for wearable and portable applications; micropower management electromagnetic, triboelectric, and thermoelectric energy harvesters - design, development, and research. We elaborate electromagnetic, thermoelectric as well as triboelectric energy harvesters for wearable and other applications, as well as electronic systems for energy accumulation and sensor powering by accumulated energy.
Lasers are incredibly versatile tools for material processing, boasting a wide range of applications. Our institution has proposed and undertaken a novel approach that focuses on utilizing a temperature gradient field (referred to as the temperature gradient effect, or TGE) induced by powerful pulsed laser radiation for various materials processing purposes.
The main originality of our studies lies in leveraging the TGE to achieve diverse goals in different material processes. For instance, we can effectively redistribute impurity atoms, like Sn in the host material (Si)Ge of epitaxial solid solutions, which are grown using the molecular beam epitaxy method (MBE). Furthermore, this technique enables us to generate or anneal defects, depending on the specific material, and achieve controlled surface oxidation at the nanolevel, as well as the formation of quantum cones.
An additional advantage of employing the TGE is the formation of a graded bandgap structure for semiconductors, accomplished through the consistent redistribution of impurity atoms. Moreover, the approach facilitates the relaxation of residual stresses.
These groundbreaking studies offer a fresh perspective by incorporating laser radiation as a crucial step during the growth (e.g., by MBE) of high-quality solid solutions (Si)GeSn, containing a significant Sn content. This paves the way for the fabrication of (Si)GeSn based infrared optoelectronics and electronics, opening up new possibilities in the field.
In the field of energy harvesting, the complete wearable systems, including energy generation modules, power management modules, sensor modules, as well as communication modules for wireless data transmission, are elaborated for mainly wearable applications.
| Total employees | 2222 |
| Employees in space | 5 |
| Turnover | 69 483 672,00 EUR |
